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• W2004076459 abstract "Two sets of p- and n-conductivity type silicon samples have been irradiated by 6.6 MeV electrons with fluence from 1 to 5 (×1016) e/cm2. Hall and magnetoresistivity measurement techniques were used to determine irradiation induced changes. The point defect coalescence was assumed to describe the behavior of the electrical parameters." @default.
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• W2004076459 date "2014-11-01" @default.
• W2004076459 modified "2023-10-07" @default.
• W2004076459 title "Defect analysis in fast electron irradiated silicon by Hall and magnetoresistivity means" @default.
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• W2004076459 doi "https://doi.org/10.1016/j.nimb.2014.08.007" @default.
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