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- W2004081966 abstract "(a) Temperature dependence of the electrical resistivity of VO<sub>2</sub> films. (b) The <italic>T</italic><sub>MIT</sub> as a function of oxygen pressure. The inset is the hysteresis loop of <italic>E</italic><sub>2</sub>." @default.
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- W2004081966 date "2015-01-01" @default.
- W2004081966 modified "2023-10-12" @default.
- W2004081966 title "Manipulations from oxygen partial pressure on the higher energy electronic transition and dielectric function of VO<sub>2</sub> films during a metal–insulator transition process" @default.
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- W2004081966 doi "https://doi.org/10.1039/c5tc00002e" @default.
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