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- W2004108481 abstract "A channel suspension method to fabricate high performance graphene field effect transistors (GFET) is presented in this paper. The balance is reached between gate efficiency and carrier mobility. A GFET with 15 μm × 15 μm gate dimension achieves a high normalized transconductance. Peak intrinsic carrier mobility is extracted to be 44 600 cm2v−1s−1. Suspension of the graphene channel is confirmed by AFM, SEM, and gate capacitance measurements. Unlike traditional substrate supported GFET, the proposed suspended-channel structure suppresses the influence of extrinsic scatterings and, meanwhile, maintains a certain gate controllability." @default.
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- W2004108481 date "2013-11-04" @default.
- W2004108481 modified "2023-10-18" @default.
- W2004108481 title "High carrier mobility in suspended-channel graphene field effect transistors" @default.
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- W2004108481 doi "https://doi.org/10.1063/1.4828835" @default.
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