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• W2004116870 abstract "A technique for measuring stress (positive and negative) with a lateral spatial extent of approximately 2 μm is introduced. The technique, implemented using a Raman microprobe, is demonstrated with measurements of the frequency shift of the sharp, R-luminescence lines (2Ā and Ē to 4A2 radiative transitions) in, and around, a hardness indentation in a 0.06-wt%-chromium doped sapphire. From the observed frequency shifts the stresses in regions sampled in the hardness impression, in the complex stress field surrounding it, and at the tip of a crack are measured." @default.
• W2004116870 created "2016-06-24" @default.
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• W2004116870 date "1990-11-01" @default.
• W2004116870 modified "2023-10-03" @default.
• W2004116870 title "Measurement of Stresses Using Fluorescence in an Optical Microprobe: Stresses around Indentations in a Chromium-Doped Sapphire" @default.
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• W2004116870 doi "https://doi.org/10.1111/j.1151-2916.1990.tb06435.x" @default.
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