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- W2004121657 abstract "Measured electron injection probabilities (P JN ) into the gate oxide of MOS structures [1] are presented for both liquid nitrogen and room temperature. For the first time P JN has been measured for total voltage drops (V TOT ) in the substrate spanning from well below to well above the value corresponding to the Si-SiO 2 barrier height (V* TOT = Φ B / q = 3.15 V). In contrast to MOSFET data [2], here two different injection regimes can clearly be distinguished. For V TOT < V* TOT a regime occurs in which injection is no longer caused only by the electron energy gained in the electric field but also by the additional energy from phonon absorption. No lucky electron model holds true in this regime and therefore some insight will be given here by means of Monte Carlo simulations of the injection experiment. A simple analysis technique is developed, that explains the observed temperature dependence and injection regimes of P JN ." @default.
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- W2004121657 date "1996-04-01" @default.
- W2004121657 modified "2023-10-14" @default.
- W2004121657 title "Electron Injection into the Gate Oxide of MOS Structures at Liquid Nitrogen Temperature : Measurement and Simulation" @default.
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- W2004121657 doi "https://doi.org/10.1051/jp4:1996303" @default.
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