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- W2004135912 abstract "We investigated the characteristics of deep levels in heavily Al-doped ZnSe layers grown by molecular beam epitaxy, whose electron concentration is saturated. Low-temperature photoluminescence showed deep level emission around 2.25 eV, and its intensity increases with Al concentration. This deep-level is located at 0.55 eV above valence band maximum, implying a point defect such as a self-activated center, AlZnVZn. Deep-level transient spectroscopy was used to investigate non-radiative trap centers in Al-doped ZnSe layers, and showed the presence of two electron trap centers at depths of 0.16 and 0.80 eV below conduction band minimum, with the electron capture cross-sections of 810−12 and 1×10−7 cm2, respectively. It is suggested the carrier compensation in heavily Al-doped ZnSe layers be ascribed to the deep levels." @default.
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- W2004135912 date "2003-10-01" @default.
- W2004135912 modified "2023-09-25" @default.
- W2004135912 title "Characteristics of deep levels in Al-doped ZnSe grown by molecular beam epitaxy" @default.
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- W2004135912 doi "https://doi.org/10.1016/j.mssp.2003.07.017" @default.
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