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- W2004148519 abstract "Relaxation phenomena involving the motion of hydrogen in hydrogenated amorphous silicon, that have traditionally been described with a distribution of relaxation times and a stretched-exponential functional, were recently analysed by Van de Walle (Van de Walle C G 1996 Phys. Rev. B 53 11 292) in terms of retrapping in a three-level energy diagram. We show that the expression derived by Van de Walle can also be obtained on the basis of hydrogen transport via interstitial positions which are in thermal equilibrium with a set of hydrogen traps located about 1 eV below the hydrogen chemical potential. However, the models based on hydrogen retrapping only give a good account of the relaxations for temperatures above room temperature. Dispersive behaviour is assumed to be responsible for the discrepancy at lower temperatures." @default.
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- W2004148519 date "1998-07-06" @default.
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- W2004148519 title "Hydrogen motion and stretched-exponential relaxation in a-Si:H" @default.
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- W2004148519 doi "https://doi.org/10.1088/0953-8984/10/26/016" @default.
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