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- W2004151766 abstract "We show the importance of acoustic phonon confinement in ultrathin silicon-on-insulator inversion layers by comparing electron mobility calculated by the Monte Carlo method assuming a bulk acoustic phonon model (the usual procedure) with that obtained by using a confined acoustic phonon model developed in this work. Both freestanding and rigid boundary conditions are taken into account for the evaluation of the confined phonon dispersion in a three-layer structure. Mobility reductions of 30% are observed for silicon thicknesses of around 5–10nm when the confined acoustic phonon model is used." @default.
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- W2004151766 date "2006-03-20" @default.
- W2004151766 modified "2023-10-16" @default.
- W2004151766 title "Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers" @default.
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- W2004151766 doi "https://doi.org/10.1063/1.2187952" @default.
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