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• W2004152051 abstract "Abstract The effect of ammonia gas on amorphous indium gallium zinc oxide thin film transistors is investigated. The ammonia is incorporated into the sputtered a-IGZO film during the deposition process. The results indicate that the sub-threshold swing of the NH 3 incorporated TFTs is significantly improved from 2.8 to 1.0 V/decade, and the hysteresis phenomenon is also suppressed during the forward and reverse sweeping measurement. By X-ray photoelectron spectroscopy analyses, Zn–N and O–H bonds are observed in ammonia incorporated a-IGZO film. Therefore, the improvements in the electrical performance of TFTs are attributed to the passivation of dangling bonds and/or defects by ammonia." @default.
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• W2004152051 date "2011-07-01" @default.
• W2004152051 modified "2023-10-14" @default.
• W2004152051 title "Device characteristics of amorphous indium gallium zinc oxide thin film transistors with ammonia incorporation" @default.
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• W2004152051 doi "https://doi.org/10.1016/j.sse.2011.01.001" @default.
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