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- W2004154148 abstract "Abstract We report about the time dependent gate dielectric breakdown failure of high voltage p-channel MOSFETs submitted to hot-carrier stress. We consider the time integral of the instantaneous gate current raised to a constant exponent as a measure of the dielectric film wear out, and we check that this integral computed up to the dielectric failure time is indeed a constant not depending on the drain–source stress bias." @default.
- W2004154148 created "2016-06-24" @default.
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- W2004154148 date "2011-08-01" @default.
- W2004154148 modified "2023-09-26" @default.
- W2004154148 title "Hot-carrier-induced time dependent dielectric breakdown in high voltage pMOSFETs" @default.
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- W2004154148 doi "https://doi.org/10.1016/j.microrel.2011.03.036" @default.
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