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• W2004162261 abstract "A tritium beta-voltaic battery using a crystalline silicon convertor composed of (1 0 0)Si/SiO2/Si3N4 film degrades remarkably with radiation from a high intensity titanium tritide film. Simulation and experiments were carried out to investigate the main factor causing the degradation. The radiation damages mainly comes from the x-ray emitted from the titanium tritide film and beta particle can relieve the damages. The x-ray radiation induced positive charges in the SiO2 film destroying the output property of the PN diode with the induction of an electric field." @default.
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• W2004162261 date "2014-08-01" @default.
• W2004162261 modified "2023-10-14" @default.
• W2004162261 title "The radiation damage of crystalline silicon PN diode in tritium beta-voltaic battery" @default.
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• W2004162261 doi "https://doi.org/10.1016/j.apradiso.2014.03.027" @default.
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