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- W2004169699 abstract "The results of the study of SiC epitaxial layer growth kinetics in the system SiC-C are reported. The effects of temperature, pressure and heterogeneous reactions during the epitaxial layer formation have been studied in vacuum and at different partial pressures of argon in the system. An analysis of the experimental results was made on the basis of the theory of mass transfer by diffusion, taking into consideration the surface reactions. The dependence of the total supersaturation on the velocity of the epitaxial layer growth has been proposed. It has been established that above a certain pressures of argon in the system, and depending on the temperature of growth, the process is controlled primarily by mass transfer by diffusion, while at lower pressures the heterogeneous surface processes influence the kinetics of growth." @default.
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- W2004169699 date "1979-02-01" @default.
- W2004169699 modified "2023-10-17" @default.
- W2004169699 title "Study of silicon carbide epitaxial growth kinetics in the SiC-C system" @default.
- W2004169699 doi "https://doi.org/10.1016/0022-0248(79)90068-x" @default.
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