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• W2004171058 abstract "A negative magnetoresistance at low magnetic fields and low temperatures was evidenced in n-type GaSb samples having an electron density just above the critical value for the metal-insulator transition and was interpreted in terms of quantum-interference effects. The inelastic scattering time was derived as a function of the temperature by the analysis of the data with a standard model, which includes weak localization and electron-electron interaction effects. The results of the fitting and the Isawa electron-electron scattering time were found to agree only if a nonnegligible amount of disorder is taken into account in the quantum-interference correction to the conductivity near the metal-insulator transition. These results are discussed in the light of the structural characterization of the investigated samples. The negative magnetoresistance effects were also observed in non-Ohmic measurements, with a behavior consistent with the usual electron temperature model." @default.
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• W2004171058 date "2007-09-15" @default.
• W2004171058 modified "2023-09-25" @default.
• W2004171058 title "Negative magnetoresistance effects in metallic n-type GaSb" @default.
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• W2004171058 doi "https://doi.org/10.1063/1.2768013" @default.
• W2004171058 hasPublicationYear "2007" @default.
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