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- W2004188503 abstract "We fabricated Ge metal-oxide-semiconductor (MOS) capacitors with Pt/HfO2 gate stack and demonstrated the effects of post metallization annealing on their structural and electrical properties. Post metallization annealing was carried out at the temperatures of 500 and 600^oC for 30min in oxygen (O2) ambient. Post metallization annealing at both temperatures led to the reduction of the interface traps density (Dit) with a decrease in accumulation capacitance. By considering the presence of interfacial layer (IL) in-between HfO2 and Ge, the effective work function (@Fm,eff) values of Pt gate electrode after annealing at 500 and 600^oC, extracted from the relations of equivalent oxide thickness (EOT) versus flatband voltages (VFB), were determined to be ~4.05 and ~5.43eV, respectively. The presence of positive charge at the interface between HfO2 and IL produced by the formation of oxygen-rich HfO2/IL interface resulted in the minimization of Fermi level pinning in Ge, which could be responsible for relatively high @Fm,eff value of Pt gate electrode in Ge MOS capacitor with O2 post metallization annealing at 600^oC." @default.
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- W2004188503 date "2012-01-01" @default.
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- W2004188503 title "Effect of post metallization annealing on structural and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitors with Pt/HfO2 gate stack" @default.
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- W2004188503 doi "https://doi.org/10.1016/j.mee.2011.03.156" @default.
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