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• W2004192241 abstract "By means of first-principles density functional theory calculations, we find that hydrogen-passivated ultrathin silicon nanowires (SiNWs) along the [100] direction with symmetrical multiple surface dangling bonds (SDBs) and boron doping can have a half-metallic ground state with 100% spin polarization, where the half-metallicity is shown to be quite robust against external electric fields. Under the circumstances with various SDBs, the H-passivated SiNWs can also be ferromagnetic or antiferromagnetic semiconductors. The present study not only offers a possible route to engineer half-metallic SiNWs without containing magnetic atoms but also sheds light on manipulating spin-dependent properties of nanowires through surface passivation." @default.
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• W2004192241 date "2009-08-14" @default.
• W2004192241 modified "2023-09-28" @default.
• W2004192241 title "Half-metallic silicon nanowires: Multiple surface dangling bonds and nonmagnetic doping" @default.
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• W2004192241 doi "https://doi.org/10.1103/physrevb.80.081306" @default.
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