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• W2004204061 abstract "The effects of isovalent doping on electronic and magnetic properties in sputtered polycrystalline Ce1−xSnxO2 films were investigated. All the samples have a fluorite structure with [100] preferred orientation. The Sn doping helps to boost the magnetism in CeO2, but has no significant impact when the doping content exceeds 6% (x > 0.06). Experimental analysis indicates that the magnetism may be directly associated with the structure distortion as well as the concentration of Ce3+ and oxygen vacancies. Theoretical calculations based on the density-functional theory suggest that the redox process of CeO2 can be influenced by the presence of dopant. The superexchange mechanism through Ce–O–Ce interaction and F+ centers lying deep in the gap can ease the mediation of ferromagnetic coupling in the system. Meanwhile, there is a competition mechanism in electronic modification, causing the spin-polarization to have a maximum stability at a critical doping concentration." @default.
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• W2004204061 date "2014-11-17" @default.
• W2004204061 modified "2023-10-10" @default.
• W2004204061 title "Effects of electronic modification and structural distortion on ferromagnetism in sputtered CeO₂films with isovalent Sn⁴⁺doping" @default.
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• W2004204061 doi "https://doi.org/10.1039/c4ra12228c" @default.
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