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- W2004239625 abstract "The conditions for the appearance and the spectrum of localised electron states are reviewed for various inhomogeneous structures made of narrow-gap semiconductors with mutually inverted energy bands. The methods of supersymmetry and factorisation are used to solve Dirac-type equations with inhomogeneous external potentials in one-dimensional, two-dimensional, and three-dimensional systems." @default.
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- W2004239625 date "1995-07-31" @default.
- W2004239625 modified "2023-09-24" @default.
- W2004239625 title "Interface states in inhomogeneous semiconductor structures" @default.
- W2004239625 cites W561997311 @default.
- W2004239625 doi "https://doi.org/10.1070/pu1995v038n07abeh000097" @default.
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