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• W2004243039 startingPage "10120" @default.
• W2004243039 abstract "Low-intensity cw band-gap excitation enhances the etch rate of silicon by ${mathrm{XeF}}_{2}$. It has been proposed that the enhancement mechanism involves participation of photogenerated charge carriers in the fluorination reaction itself. A new study has been made of this system by molecular beam mass spectrometry. The results show that for both n- and p-type silicon the ${mathrm{SiF}}_{3}$ free radical is the primary etch product at Ar-ion laser powers exceeding 40 W/${mathrm{cm}}^{2}$. ${mathrm{SiF}}_{4}$ is also observed, but its formation is independent of light intensity. The data, including measurements of most probable translational energies, are consistent with a photochemical process being responsible for ${mathrm{SiF}}_{3}$ formation. Surface heating, which is minimal, cannot account for the experimental results. Since ${mathrm{SiF}}_{3}$ is the principal adsorbate on the surface, it is argued that etching is a result of desorption of ${mathrm{SiF}}_{3}$ stimulated by a chemical reaction involving two charge carriers. This is distinct from the photodesorption mechanism usually invoked for semiconductor surfaces, which involves single charge capture by a surface adsorbate. Evidence pertaining to participation of charge carriers in other stages of the fluorination reaction---adsorption of ${mathrm{XeF}}_{2}$ and diffusion of ${mathrm{F}}^{mathrm{ensuremath{-}}}$---has also been obtained. The data indicate that photogenerated charge carriers inhibit chemisorption of ${mathrm{XeF}}_{2}$. Field-assisted diffusion, which has been invoked as a rate-determining process in photoassisted etching of semiconductors, is not found to be so for this system." @default.
• W2004243039 created "2016-06-24" @default.
• W2004243039 creator A5064433679 @default.
• W2004243039 date "1989-05-15" @default.
• W2004243039 modified "2023-10-16" @default.
• W2004243039 title "Photochemical etching of silicon: The influence of photogenerated charge carriers" @default.
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• W2004243039 doi "https://doi.org/10.1103/physrevb.39.10120" @default.
• W2004243039 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/9947791" @default.
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