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• W2004257938 endingPage "04ER02" @default.
• W2004257938 startingPage "04ER02" @default.
• W2004257938 abstract "a -Axis-oriented BaSi 2 epitaxial films were grown on Si(111) by molecular beam epitaxy, and the diffusion coefficients of Sb and As were evaluated using secondary ion mass spectrometry (SIMS) with Cs + ions. The SIMS profiles of these atoms were reproduced well by considering both the lattice and grain boundary (GB) diffusions. The temperature dependence of lattice and GB diffusion coefficients was determined from the SIMS profiles, and their activation energies were found to be 0.77 and 0.65 eV for Sb, and 0.91 and 0.88 eV for As, respectively." @default.
• W2004257938 created "2016-06-24" @default.
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• W2004257938 date "2014-02-05" @default.
• W2004257938 modified "2023-09-26" @default.
• W2004257938 title "Diffusion coefficients of impurity atoms in BaSi₂ epitaxial films grown by molecular beam epitaxy" @default.
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• W2004257938 doi "https://doi.org/10.7567/jjap.53.04er02" @default.
• W2004257938 hasPublicationYear "2014" @default.
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