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- W2004271657 abstract "By using an open and corrosion resistant AsCl3-Ga-N2 system, high purity VPE GaAs was prepared. The reproducibility of the electron concentrations in the range of 1013-1014 cm-3 and electron mobilities μ77 K = (1.6-2.1) x 105 cm2/V · s is quite good. The highest mobility was 3.76 x 105 cm2/V · s at 41 K and the lowest total ionized impurity concentration was 7.7 x 1013 cm-3. Some conditions affecting the purity of VPE GaAs were studied; they were (1) H2 content in N2; (2) area of gallium source; (3) growth temperature; (4) gas drift velocity and flow efficiency; (5) AsCl3 mole fraction. Hall measurements showed that VPE GaAs with a lower compensation ratio can be grown in the N2 system. Photoluminescence measurements showed that silicon in epitaxial layers could be suppressed and that the dominant residual imurity was carbon." @default.
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- W2004271657 date "1982-01-01" @default.
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- W2004271657 title "Vapour phase epitaxial growth of high purity GaAs with the AsCl3-Ga-N2 system" @default.
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- W2004271657 doi "https://doi.org/10.1016/0022-0248(82)90452-3" @default.
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