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• W2004271929 abstract "Several hundred epitaxial films of indium-doped lead tin telluride were grown on BaF2 substrates using a hot-wall method and a source material containing 0.5 at.%In. Films were grown from source materials containing SnTe at concentrations of 0, 22, 24.8 and 27.7 mol.%. The growth procedure, source material preparation and substrate preparation are described. The films were characterized by van der Pauw measurements of the mobility and carrier concentration at room temperature and 77 K. As finally developed, the growth procedures gave a high yield of films with mobilities at 77 K in the range of 3.5–4.5 m2 V-1s-1." @default.
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• W2004271929 date "1984-12-01" @default.
• W2004271929 modified "2023-09-23" @default.
• W2004271929 title "Preparation and properties of epitaxial films of indium-doped lead tin telluride" @default.
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• W2004271929 doi "https://doi.org/10.1016/0040-6090(84)90049-x" @default.
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