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• W2004281252 abstract "Liquid phase epitaxial (LPE) growth of Ga1−xInxAsySb1-ywith x<0.25 and y<0.20 was made on GaSb(111)B subs rates. The surface morphology, the interface between the epilayer and the substrate, and the growth kinetics were studied in connection with the lattice mismatch Δα=αdeposit-αsubstrate and the initial supersaturation of the melt. The main parameter which governs the LPE was found to be the sign of the lattice mismatch at the growth temperature. For positive Δα, satisfactory quality layers could be obtained using an initial supercooling of the melt. For negative Δα, a strong instability of the solid-liquid interface was noted. The GaSb substrate was dramatically dissolved and uniform layers could not be grown. The growth kinetics of the mismatched (Δα/α=3×10-3) epitaxial layers are liquid diffusion controlled, with a K factor equal to 0.15 μm°C-1 s-12." @default.
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• W2004281252 date "1986-05-01" @default.
• W2004281252 modified "2023-09-27" @default.
• W2004281252 title "LPE growth of GaInAsSb/GaSb system: The importance of the sign of the lattice mismatch" @default.
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• W2004281252 doi "https://doi.org/10.1016/0022-0248(86)90044-8" @default.
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