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- W2004307851 abstract "Thermostimulated luminescence (TSL) studies of pure CdF2 crystals irradiated with either X-rays or UV-light at 77 K are performed in the temperature range 77 to 300 K. After X-irradiation three peaks are observed at 95, 137, and 170 K while after UV-irradiation only the 170 K peak is present. The activation energies of the recombination processes are 0.19, 0.28, and 0.34 eV for the three peaks, respectively. The TSL peak at low temperature is attributed to the recombination of mobile Vk centers with shallow electronic traps. The high temperature peak can be mainly ascribed to the recombination of thermally released electrons with F centers. Die thermisch stimulierte Lumineszenz (TSL) von reinen CdF2-Kristallen, die entweder mit Röntgenstrahlen oder mit UV-Licht bei 77 K bestrahlt worden sind, wird im Temperaturbereich von 77 bis 300 K untersucht. Nach Bestrahlung mit Röntgenstrahlen werden drei Maxima bei 95, 137 und 170 K und nach Bestrahlung mit UV-Licht wird nur das Maximum bei 170 K beobachtet. Die Aktivierungsenergien für die Rekombinationsprozesse betragen 0,19, 0,28 bzw. 0,33 eV für die drei Maxima. Der Tieftemperatur-TSL-Peak wird der Rekombination von beweglichen Vk-Zentren mit flachen Elektronhaftstellen zugeschrieben. Der Hochtemperaturpeak rührt her von der Rekombination thermisch freigesetzter Elektronen mit F-Zentren." @default.
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- W2004307851 date "1989-09-16" @default.
- W2004307851 modified "2023-09-23" @default.
- W2004307851 title "Defect annealing in pure CdF2 crystals" @default.
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- W2004307851 doi "https://doi.org/10.1002/pssa.2211150137" @default.
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