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• W2004312566 abstract "Spectroscopic ellipsometry (SE) measurements were carried out in order to characterize the optical properties of silicon nanoscale inclusions (Si-ni) contained in silicon-rich silicon nitride (SRSN) films. These films were deposited using the plasma enhanced chemical vapor deposition (PECVD) technique followed by rapid thermal annealing (RTA) during 1 min. We focus our study on the influence of the deposition and annealing conditions – such as the ammonia to silane flow ratio R, the annealing atmosphere and temperature – on the optical responses of the SRSN layers and the behavior of the Si-ni dielectric functions. Our results suggest that the variation of R affects in a more significant way the structure and optical properties of the SRSN films than the change of the annealing gas or temperature." @default.
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• W2004312566 date "2011-02-01" @default.
• W2004312566 modified "2023-09-25" @default.
• W2004312566 title "Dielectric functions of PECVD-grown silicon nanoscale inclusions within rapid thermal annealed silicon-rich silicon nitride films" @default.
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• W2004312566 doi "https://doi.org/10.1016/j.tsf.2010.11.071" @default.
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