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- W2004328089 abstract "The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/μm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> using high-/spl kappa/ AlTaO/sub x/ fabricated at 400/spl deg/C. In addition, small voltage dependence of capacitance of <600 ppm (quadratic voltage coefficient of only 130 ppm/V <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> ) is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-/spl kappa/ AlTaO/sub x/ MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime." @default.
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- W2004328089 date "2003-05-01" @default.
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- W2004328089 title "High-density MIM capacitors using AlTaO<sub>x</sub> dielectrics" @default.
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- W2004328089 doi "https://doi.org/10.1109/led.2003.812572" @default.
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