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- W2004332557 abstract "A high-speed movie technique was used to investigate the growth front movement during electron beam recrystallization of thin silicon layers on insulating material. In a laterally epitaxial growth process, it was clearly observed that the molten zone shape dramatically changes across a seed opening, which is due to nonuniformity in heat dissipation toward the substrate in the vicinity of the seed opening. The molten zone width and velocities of the melt front and growth front were quantitatively analyzed using digital film motion analysis. The growth front velocity was found to drastically change by ∼30% across the seed opening." @default.
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- W2004332557 date "1987-04-13" @default.
- W2004332557 modified "2023-10-02" @default.
- W2004332557 title "Direct observation of growth front movement in electron beam recrystallization of silicon layer on insulator" @default.
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- W2004332557 doi "https://doi.org/10.1063/1.98002" @default.
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