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- W2004354705 abstract "GaAs has been grown by molecular beam epitaxy on Si(100) using different substrate preparations, different conditions for the growth of a buffer layer and different thickness of the active layer. The quality of the layers is assessed by the direct interpretation of the pseudodielectric function obtained through ellipsometric measurements. The results suggest a preference for certain substrate preparations and the condition for epitaxial growth of GaAs on Si(100)." @default.
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- W2004354705 date "1990-01-01" @default.
- W2004354705 modified "2023-10-01" @default.
- W2004354705 title "Quality of molecular-beam-epitaxy-grown GaAs on Si(100) studied by ellipsometry" @default.
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- W2004354705 doi "https://doi.org/10.1016/0921-5107(90)90074-l" @default.
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