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- W2004355361 abstract "Modeling of low temperature polycrystalline (poly) Si thin film transistors (TFTs) in both the subthreshold and the on-state regions is presented. In the subthreshold region, effective channel mobility (μ eff ) model is based on the Meyer-Neldel rule with the physical origin of carrier thermionic emission activated by multi-phonon absorption process. In the on-state region, μ eff model is based on grain boundary barrier controlled carrier thermionic emission and mobility degradation effect. A unified drain current model is derived by considering the inversion carrier density covering both subthreshold and on-state regions." @default.
- W2004355361 created "2016-06-24" @default.
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- W2004355361 date "2014-06-01" @default.
- W2004355361 modified "2023-09-26" @default.
- W2004355361 title "Physical modeling of low temperature polycrystalline Si thin-film transistors" @default.
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- W2004355361 doi "https://doi.org/10.1109/edssc.2014.7061091" @default.
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