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- W2004359063 abstract "It is shown that Ge-doping of silicon may be implemented in the technology of the SHF IC manufacture. Epitaxial layers doped with germanium allow for the leakage current to be decreased and for the breakdown voltage of p-n-junctions and MOS structures produced by the MOSFET process to be increased." @default.
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- W2004359063 date "2003-01-01" @default.
- W2004359063 modified "2023-09-25" @default.
- W2004359063 title "Germanium-doped epitaxial silicon layers for SHF ICs" @default.
- W2004359063 doi "https://doi.org/10.1109/crmico.2003.158939" @default.
- W2004359063 hasPublicationYear "2003" @default.
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