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• W2004385830 abstract "We report on round quantum dots grown on InP (100) substrate, which emit around 1.55 μm. At 10 K the full width at half maximum is as small as 28 meV, attesting a rather uniform size distribution. The carrier lifetimes are almost the same across the whole photoluminescence band, indicating the good isolation of quantum dots. Continuous-wave lasings are observed at room temperature from laser diodes made of these quantum dots." @default.
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• W2004385830 date "2005-03-01" @default.
• W2004385830 modified "2023-10-17" @default.
• W2004385830 title "Optical characteristics of In(Ga)As quantum dots on (100) InP substrate for 1.5μm laser diodes" @default.
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• W2004385830 doi "https://doi.org/10.1016/j.mejo.2005.02.058" @default.
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