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- W2004388512 abstract "According to existing theories, several effects contribute to the generation of heat in semiconductor devices, both in stationary and in transient processes. By performing within the drift-diffusion approximation simulations of a Si power diode during different operating conditions (turn-on, steady-state and turn-off), various contributions to the heat generation and temperature distribution have been calculated. It is found that Joule heat and recombination heat alone determine the lattice temperature distribution, even in strongly time-dependent processes. The operating conditions have been chosen such that these results should have a rather general validity." @default.
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- W2004388512 date "1996-10-01" @default.
- W2004388512 modified "2023-10-02" @default.
- W2004388512 title "Heat generation in Si bipolar power devices: The relative importance of various contributions" @default.
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- W2004388512 doi "https://doi.org/10.1016/0038-1101(96)00056-1" @default.
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