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- W2004398320 abstract "The realisation of high performance InGaAs JFETs designed for InP based optoelectronic integration is reported. An optimised MBE process for the gate layer growth is presented. JFETs fabricated by using a self-aligning technique exhibit very high cut-off frequencies of fT = 28GHz and fMAX = 38GHz." @default.
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- W2004398320 date "1990-05-24" @default.
- W2004398320 modified "2023-10-14" @default.
- W2004398320 title "Superior microwave performance of InGaAs JFETs grown by MBE" @default.
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- W2004398320 doi "https://doi.org/10.1049/el:19900479" @default.
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