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- W2004403758 abstract "Thick heterojunction cells composed of fullerene and p-type hole-transporting materials (HTMs) doped with molybdenum oxide (MoO 3 ) were fabricated. The Fermi level ( E F ) of HTMs shifted toward the positive direction and close to the upper edge of the valence band following MoO 3 doping. These E F shifts indicate that intrinsic HTMs changed to be of the p-type. The introduction of p-type HTMs to the cells increased photocurrent density and fill factor. The increase in photocurrent density can be explained by the formation of built-in potential at the interface between p-type HTMs and C 60 . On the other hand, the increase in fill factor can be explained by the drastic decrease in the resistance of 300-nm-thick HTM films, which reached a very small value of 2 Ω." @default.
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- W2004403758 date "2013-04-01" @default.
- W2004403758 modified "2023-09-25" @default.
- W2004403758 title "Improvement of Photovoltaic Characteristics by MoO3Doping of Thick Hole-Transporting Films" @default.
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- W2004403758 doi "https://doi.org/10.7567/jjap.52.04cr12" @default.
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