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- W2004415728 abstract "The growth rate, resistivity and intrinsic stress of RuO2 films deposited by reactive sputtering with an O2Ne or an O2Ar gas mixture were investigated as a function of the following sputtering parameters: gas composition, gas pressure, sputtering power and substrate bias. We found that stoichiometric RuO2 films could be obtained over a wider range of sputtering conditions in the O2Ne mixture than in the O2Ar mixture." @default.
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- W2004415728 date "1989-06-01" @default.
- W2004415728 modified "2023-10-16" @default.
- W2004415728 title "Reactive sputtering of RuO2 films" @default.
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- W2004415728 doi "https://doi.org/10.1016/0040-6090(89)90137-5" @default.
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