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• W2004428102 abstract "The influence of the temperature of the top wall of horizontal reactor cells on the growth rate, the doping of GaAs with disilane and diethylzinc, and on the Al composition in AlxGa1 − xAs has been studied. It is found that the uniformity of the growth rate of the GaAs layer, the carrier concentration in GaAs and the Al composition in AlxGa1 − xAs, all are significantly improved by keeping the top wall temperature at around 370°C. These effects are found to be more pronounced at one atmosphere than at 200 mbar. The experimental results are explained by the influence of thermal diffusion on the growth and doping of GaAs or AlGaAs, which depends on the temperature gradient above the susceptor, and by the depletion of the growth and dopant species because of the deposition of the compound or of the individual dopant species on the top wall of the reactor. Controlled top cooling in this way provides an effective and simple method to improve the performance of the horizontal MOVPE reactors, especially atmospheric pressure reactors, with almost no extra cost for the operation of the system." @default.
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• W2004428102 date "1995-11-01" @default.
• W2004428102 modified "2023-10-17" @default.
• W2004428102 title "Influence of the temperature of the reactor top wall on growth processes in horizontal MOVPE reactors" @default.
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• W2004428102 doi "https://doi.org/10.1016/0022-0248(95)00304-5" @default.
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