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• W2004453505 endingPage "095412" @default.
• W2004453505 startingPage "095412" @default.
• W2004453505 abstract "Nitrogen incorporated tungsten oxide films are deposited on heated quartz substrates (973 K) for various nitrogen background pressures (namely, pN2 = 0.04, 0.08, 0.12, 0.17 and 0.20 mbar) by the pulsed laser deposition technique. The prepared films are characterized by using techniques such as x-ray diffraction (XRD), energy dispersive x-ray spectroscopy (EDX), atomic force microscopy (AFM), scanning electron microscopy, micro-Raman spectroscopy, UV–visible spectroscopy and temperature dependent dc electrical resistivity studies. XRD measurements revealed the presence of tungsten sub-oxide and WO3 phases depending on the nitrogen ambient pressure. Nitrogen incorporation in the films is confirmed through EDX analysis. Morphological features consisting of densely packed, void-free grains with a distinct grain boundary are portrayed through the AFM images of the films. The WO3 lattice distortion due to nitrogen incorporation is discussed using micro-Raman spectra of the films. Band gap narrowing, moderate transmittance in the visible range and the very low resistivity exhibited by the films prepared at pN2 = 0.12 mbar are imperative as far as solar cell applications are considered. A comparably higher visible transmittance with a band gap of 3.141 eV and a low resistivity obtained for the N : WO3 films prepared at a nitrogen ambient of 0.17 mbar is among the best reported for the coexistence of transparency in the visible range and conductivity in tungsten oxide films, which make them significant for micro-electronic applications." @default.
• W2004453505 created "2016-06-24" @default.
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• W2004453505 date "2009-04-15" @default.
• W2004453505 modified "2023-09-26" @default.
• W2004453505 title "Transparent and low resistive nanostructured laser ablated tungsten oxide thin films by nitrogen doping: I. Nitrogen pressure" @default.
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• W2004453505 doi "https://doi.org/10.1088/0022-3727/42/9/095412" @default.
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