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- W2004476274 startingPage "11014" @default.
- W2004476274 abstract "Layers of ${mathrm{Ga}}_{x}{mathrm{In}}_{1ensuremath{-}x}mathrm{P}$ $(0.47<x<0.54)$ with thicknesses of 50, 100, and 1000 nm, epitaxially grown by metal-organic chemical vapor deposition on GaAs substrates, were studied by transmission electron microscopy, high-resolution x-ray diffraction, and photoluminescence measurements. The data obtained were used to derive the degree of ordering, $ensuremath{eta}(x),$ as a function of the layer composition, x. A strong influence of the layer thickness on the $ensuremath{eta}(x)$ functions (thickness effect) was observed. A semiphenomenological model of the order-disorder phase transition in strained layers was developed, which takes account of the free energy changes arising from the atomic rearrangements. On the basis of this model, the thickness effect in atomic ordering is quantitatively explained in terms of concentration fluctuations across the layer." @default.
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- W2004476274 date "1999-10-15" @default.
- W2004476274 modified "2023-09-26" @default.
- W2004476274 title "Thickness effect in the atomic ordering of strainedGaxIn1−xPlayers" @default.
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- W2004476274 doi "https://doi.org/10.1103/physrevb.60.11014" @default.
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