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- W2004505979 abstract "HfAl 2 O5 dielectric film with an O-gettering Ti-capping layer was treated with rapid thermal annealing process and its interfacial structure and surface morphology were reported. X-ray reflectivity measurements and X-ray photoelectron spectroscopy indicated that the interfacial layers were composed of a 0.5 nm HfAlSiO layer and a 1.5 nm Si x (SiO 2 ) 1-x (x< 1) layer for the as-deposited film. However, for the annealed film, HfAlSiO layer was not found and the 1.5 nm Si x (SiO 2 ) 1-x transformed to a 1 nm SiO 2 . Atom force microscopy showed that a Ti-capping layer did not affect surface roughness." @default.
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- W2004505979 date "2008-11-01" @default.
- W2004505979 modified "2023-09-22" @default.
- W2004505979 title "Engineering of interfacial layer between HfAl2O5 dielectric film and Si with a Ti-capping layer" @default.
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- W2004505979 doi "https://doi.org/10.1016/j.tsf.2008.08.066" @default.
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