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- W2004558216 startingPage "1554" @default.
- W2004558216 abstract "Gas source molecular beam epitaxal growth of GaSb is investigated. Sb(CH 3 ) 3 is found to decompose effectively when the cracking furnace temperature is higher than 800°C. A mirror-like GaSb epi-layer is shown to be obtainable using Sb(CH 3 ) 3 and a solid Ga source for the first time." @default.
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- W2004558216 date "1988-08-01" @default.
- W2004558216 modified "2023-09-26" @default.
- W2004558216 title "Gas Source MBE Growth of GaSb" @default.
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- W2004558216 doi "https://doi.org/10.1143/jjap.27.1554" @default.
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