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- W2004579215 abstract "This paper describes a new advanced HiGT (high-conductivity IGBT) which is the combination of a low injection (LiPT: low injection punch-through) p-emitter and a planar gate with a hole barrier and punchthrough structure. The experimental results and theoretical discussion of this 4.5 kV advanced HiGT show remarkable low-loss characteristics and strong short-circuit immunity. These results prove for the first time that a hole barrier integrated in a planar IGBT is effective even with LiPT." @default.
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- W2004579215 date "2004-01-01" @default.
- W2004579215 modified "2023-09-24" @default.
- W2004579215 title "Advanced HiGT with low-injection punch-through (LiPT) structure [high-conductivity IGBT" @default.
- W2004579215 doi "https://doi.org/10.1109/wct.2004.239837" @default.
- W2004579215 hasPublicationYear "2004" @default.
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