FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2004619698> ?p ?o ?g. }

• W2004619698 endingPage "7469" @default.
• W2004619698 startingPage "7465" @default.
• W2004619698 abstract "An unbalanced magnet (UM) is commonly employed in ionization magnetron sputtering (IMS) in order to increase the ionization rates of sputtering species. In this paper, sputtering using an UM is compared with that using a balanced magnet (BM) during the deposition of Ti thin layers. Ti layers were fabricated on the top of polycrystalline silicon (poly-Si) gate electrodes of antenna metal oxide semiconductor (MOS) capacitors with various thicknesses of gate SiO2 layers ranging from 25 to 80 A, and the durability of the gate SiO2 layers was monitored by current–voltage (I–V) measurements. It was found that the MOS capacitors with thin SiO2 layers fabricated with the UM were much more damaged than those fabricated with the BM. This characteristic became more marked for thinner SiO2 layers. Its origin was investigated by monitoring the current injected from the plasma to the substrate using a specially designed electrical configuration, and was explained as follows. Electrons are carried toward substrates by curvature drift originating from the diverging magnetic field perpendicular to the substrate. This causes the accumulation of electrons on the gate SiO2 thin layers where the diverging magnetic field is developed at the beginning of discharge, i.e., before the uniform Ti deposition starts to occur. Consequently, the accumulated electrons break the gate SiO2 layer. These results suggest that a new design of magnetic fields for the UM is needed so that the magnetic field does not reach the substrate. It is particularly important to keep the diverging magnetic fields away from the substrates at the beginning of discharge." @default.
• W2004619698 created "2016-06-24" @default.
• W2004619698 creator A5021828956 @default.
• W2004619698 creator A5049353667 @default.
• W2004619698 creator A5080583377 @default.
• W2004619698 creator A5088575294 @default.
• W2004619698 date "2007-11-06" @default.
• W2004619698 modified "2023-09-24" @default.
• W2004619698 title "Evaluation of Gate Oxide Damage Caused by Ionization Magnetron Sputtering" @default.
• W2004619698 cites W1626800832 @default.
• W2004619698 cites W1643625480 @default.
• W2004619698 cites W1963495660 @default.
• W2004619698 cites W1968619506 @default.
• W2004619698 cites W1969203382 @default.
• W2004619698 cites W1975428362 @default.
• W2004619698 cites W1980949606 @default.
• W2004619698 cites W1983819438 @default.
• W2004619698 cites W1994350858 @default.
• W2004619698 cites W1996255228 @default.
• W2004619698 cites W1998903138 @default.
• W2004619698 cites W2011897358 @default.
• W2004619698 cites W2018312348 @default.
• W2004619698 cites W2030709215 @default.
• W2004619698 cites W2030805139 @default.
• W2004619698 cites W2034416521 @default.
• W2004619698 cites W2041907733 @default.
• W2004619698 cites W2053094013 @default.
• W2004619698 cites W2053871808 @default.
• W2004619698 cites W2055193165 @default.
• W2004619698 cites W2055665186 @default.
• W2004619698 cites W2137347902 @default.
• W2004619698 cites W2153408626 @default.
• W2004619698 doi "https://doi.org/10.1143/jjap.46.7465" @default.
• W2004619698 hasPublicationYear "2007" @default.
• W2004619698 type Work @default.
• W2004619698 sameAs 2004619698 @default.
• W2004619698 citedByCount "0" @default.
• W2004619698 crossrefType "journal-article" @default.
• W2004619698 hasAuthorship W2004619698A5021828956 @default.
• W2004619698 hasAuthorship W2004619698A5049353667 @default.
• W2004619698 hasAuthorship W2004619698A5080583377 @default.
• W2004619698 hasAuthorship W2004619698A5088575294 @default.
• W2004619698 hasConcept C119599485 @default.
• W2004619698 hasConcept C121332964 @default.
• W2004619698 hasConcept C123408415 @default.
• W2004619698 hasConcept C127413603 @default.
• W2004619698 hasConcept C145148216 @default.
• W2004619698 hasConcept C165801399 @default.
• W2004619698 hasConcept C171250308 @default.
• W2004619698 hasConcept C172385210 @default.
• W2004619698 hasConcept C178790620 @default.
• W2004619698 hasConcept C185592680 @default.
• W2004619698 hasConcept C19067145 @default.
• W2004619698 hasConcept C191897082 @default.
• W2004619698 hasConcept C192562407 @default.
• W2004619698 hasConcept C198291218 @default.
• W2004619698 hasConcept C22423302 @default.
• W2004619698 hasConcept C2361726 @default.
• W2004619698 hasConcept C2779851234 @default.
• W2004619698 hasConcept C49040817 @default.
• W2004619698 hasConcept C61427134 @default.
• W2004619698 hasConcept C61696701 @default.
• W2004619698 hasConcept C97892325 @default.
• W2004619698 hasConceptScore W2004619698C119599485 @default.
• W2004619698 hasConceptScore W2004619698C121332964 @default.
• W2004619698 hasConceptScore W2004619698C123408415 @default.
• W2004619698 hasConceptScore W2004619698C127413603 @default.
• W2004619698 hasConceptScore W2004619698C145148216 @default.
• W2004619698 hasConceptScore W2004619698C165801399 @default.
• W2004619698 hasConceptScore W2004619698C171250308 @default.
• W2004619698 hasConceptScore W2004619698C172385210 @default.
• W2004619698 hasConceptScore W2004619698C178790620 @default.
• W2004619698 hasConceptScore W2004619698C185592680 @default.
• W2004619698 hasConceptScore W2004619698C19067145 @default.
• W2004619698 hasConceptScore W2004619698C191897082 @default.
• W2004619698 hasConceptScore W2004619698C192562407 @default.
• W2004619698 hasConceptScore W2004619698C198291218 @default.
• W2004619698 hasConceptScore W2004619698C22423302 @default.
• W2004619698 hasConceptScore W2004619698C2361726 @default.
• W2004619698 hasConceptScore W2004619698C2779851234 @default.
• W2004619698 hasConceptScore W2004619698C49040817 @default.
• W2004619698 hasConceptScore W2004619698C61427134 @default.
• W2004619698 hasConceptScore W2004619698C61696701 @default.
• W2004619698 hasConceptScore W2004619698C97892325 @default.
• W2004619698 hasIssue "11" @default.
• W2004619698 hasLocation W20046196981 @default.
• W2004619698 hasOpenAccess W2004619698 @default.
• W2004619698 hasPrimaryLocation W20046196981 @default.
• W2004619698 hasRelatedWork W2040278833 @default.
• W2004619698 hasRelatedWork W2067838394 @default.
• W2004619698 hasRelatedWork W2093312403 @default.
• W2004619698 hasRelatedWork W2094690580 @default.
• W2004619698 hasRelatedWork W2378824725 @default.
• W2004619698 hasRelatedWork W2938213029 @default.
• W2004619698 hasRelatedWork W3209277451 @default.
• W2004619698 hasRelatedWork W591433090 @default.
• W2004619698 hasRelatedWork W1953198208 @default.
• W2004619698 hasRelatedWork W2074340788 @default.

• next