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- W2004647260 abstract "We have developed a computer model of amorphous silicon based alloy solar cells which includes the complete set of transport equations, and the use of heavily doped contact regions to realistically set up the boundary conditions. We have used this model to reveal the physics of amorphous silicon based alloy devices and to deduce material parameters from experimental data. For p-i-n cells illuminated through the n+ layer our results show that boron doping in the intrinsic layer can increase the short circuit current by enhancing the electric field near to the n+−1 interface. We show that the open circuit voltage in practical devices is determined by the recombination current, rather than by the built-in potential, and that provided the n+ layer is heavily doped, carrier back diffusion does not significantly affect the short-circuit current of p-i-n devices. Our analytical and computer calculations demonstrate that the zero field minority carrier diffusion length is intensity dependent. We relate this dependence to the density of localized states near to the valence band edge. This provides us with a novel experimental technique to measure the slope of the density of states approximately 1.2 to 1.3 eV below the conduction band edge which our experimental results show to be approximately 2800 K." @default.
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- W2004647260 date "1983-12-01" @default.
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- W2004647260 title "Amorphous silicon based alloy solar cell modeling with new diffusion length interpretation" @default.
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- W2004647260 doi "https://doi.org/10.1016/0022-3093(83)90362-9" @default.
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