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• W2004663721 abstract "In this study, a nano-columnar low-temperature (LT) GaN buffer was used to reduce the wafer bowing of a GaN layer grown on a sapphire substrate. A significant reduction in the extent of wafer bowing was observed for the GaN layer for the preserved nano-columnar LT GaN layer when compared with the conventional GaN layer. These results suggest that the preserved nano-columnar structure helped relax the GaN layer strain energy associated with thermal expansion mismatch. The flow of TMGa during the temperature ramp-up from LT to high-temperature was found to be an important process parameter to preserving the nano-columnar structure of LT GaN, resulting in less bowed GaN on sapphire." @default.
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• W2004663721 date "2013-11-01" @default.
• W2004663721 modified "2023-09-25" @default.
• W2004663721 title "Growth of GaN layer with preserved nano-columnar low temperature GaN buffer to reduce the wafer bowing" @default.
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• W2004663721 doi "https://doi.org/10.1016/j.tsf.2013.03.056" @default.
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