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• W2004668417 abstract "We study the coarsening kinetics of the two-dimensional island/pit morphology on the GaAs(100) surface after deposition of a fractional layer using grazing incidence x-ray diffraction. We find that the correlation length $l(t)$ increases as $l(t)ensuremath{propto}{t}^{n},$ with n in the range 0.7--1.3. For spinodal decomposition (coverage 0.5), we observe linear recovery. Our observations do not fall into the known universality classes of conserved coarsening kinetics, the Lifshitz-Slyozov diffusion-limited kinetics $(lensuremath{propto}{t}^{1/3}),$ or the Wagner attachment-limited kinetics $(lensuremath{propto}{t}^{1/2}),$ and therefore cannot be explained by Ostwald ripening. We present experimental results on the coverage, temperature, and orientation dependence of the coarsening rate." @default.
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• W2004668417 date "2004-04-09" @default.
• W2004668417 modified "2023-10-14" @default.
• W2004668417 title "Non-Ostwald coarsening of the GaAs(001) surface" @default.
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• W2004668417 doi "https://doi.org/10.1103/physrevb.69.165405" @default.
• W2004668417 hasPublicationYear "2004" @default.
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