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• W2004681703 abstract "In order to enhance the production of hydrocarbon ions for bias-induced diamond nucleation, high CH4 fractions up to 16% were applied in a hot filament chemical vapour deposition process. Filament temperatures between 2900 and 3000°C were used, at which the filament was kept clean throughout the process. On a negatively biased silicon substrate, diamond nucleation was observed to increase from 2×107 to 1010 cm−2 when the CH4 fraction was increased from 2% to 8%. Diamond film grown on bias-induced nuclei exhibited a preferred orientation along [001], which is believed to be growth on the nuclei with the same orientation. By calculation, the production rate of hydrogen atoms is not pronounced by plasma chemistry compared with the supply of hydrogen atoms from a clean filament. This indicates further the importance of keeping the filament clean during the biasing." @default.
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• W2004681703 date "1999-06-01" @default.
• W2004681703 modified "2023-10-14" @default.
• W2004681703 title "Negative-biased diamond nucleation on silicon at a wide range of methane concentrations in hot filament chemical vapour deposition" @default.
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• W2004681703 doi "https://doi.org/10.1016/s0925-9635(99)00102-8" @default.
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