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- W2004683105 abstract "We report pseudodielectric functions <ε> from 1.5 to 6.0 eV of InxAl1 − xP ternary alloy films. Data were obtained by spectroscopic ellipsometry on 1.2 μm thick films grown on (001) GaAs substrates by molecular beam epitaxy. Artifacts were minimized by real-time assessment of overlayer removal, leading to accurate representations of the bulk dielectric responses of these materials. Critical-point (CP) energies were obtained from numerically calculated second energy derivatives, and their Brillouin-zone origins identified by band-structure calculations using the linear augmented Slater-type orbital method." @default.
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- W2004683105 date "2014-09-01" @default.
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- W2004683105 title "Dielectric functions and interband transitions of InxAl1 − xP alloys" @default.
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- W2004683105 doi "https://doi.org/10.1016/j.cap.2014.06.026" @default.
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