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• W2004683899 abstract "Positron lifetime spectroscopy is used to detect vacancy-related defects in as-received and 12-MeV proton-irradiated $6Hensuremath{-}mathrm{SiC}$ crystals. We can infer from the temperature dependence of the lifetime spectra decomposition that neutral and negatively charged vacancy defects exist in crystals before and after proton irradiation at low fluence $(<~4ifmmodetimeselsetexttimesfi{}{10}^{15}{mathrm{H}}^{+}{mathrm{cm}}^{ensuremath{-}2}).$ Neutral vacancies are detected after irradiation at high fluence $(>~4ifmmodetimeselsetexttimesfi{}{10}^{16}{mathrm{H}}^{+}{mathrm{cm}}^{ensuremath{-}2}).$ Negatively charged ${V}_{mathrm{Si}}$ silicon monovacancies with $202ifmmodepmelsetextpmfi{}8mathrm{ps}$ lifetime are detected at low temperature in as-received n-type $6Hensuremath{-}mathrm{SiC}$ and after irradiation at low fluence. Neutral ${V}_{mathrm{S}mathrm{i}ensuremath{-}mathrm{C}}$ divacancies associated with the $(225ifmmodepmelsetextpmfi{}5)ensuremath{-}mathrm{ps}$ lifetime are produced by irradiation and dominate the positron trapping at room temperature. In addition, different types of ionic acceptors are detected. One of them acts as a strong trapping center even at room temperature." @default.
• W2004683899 created "2016-06-24" @default.
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• W2004683899 date "2003-03-31" @default.
• W2004683899 modified "2023-09-26" @default.
• W2004683899 title "Silicon vacancy-type defects in as-received and 12-MeV proton-irradiated<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mn>6</mml:mn><mml:mi>H</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant=normal>SiC</mml:mi></mml:math>studied by positron annihilation spectroscopy" @default.
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• W2004683899 doi "https://doi.org/10.1103/physrevb.67.115210" @default.
• W2004683899 hasPublicationYear "2003" @default.
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