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• W2004689282 abstract "High-temperature-processing-induced “double-stacking fault” cubic inclusions in 4H-SiC were studied with ballistic electron emission microscopy (BEEM). Large BEEM current and a ∼0.53 eV local reduction in the Schottky barrier height (SBH) were observed where the inclusions intersect a Pt interface, confirming the quantum-well nature of the inclusions and providing nanometer scale information about local electronic behavior. Measured spatial variations in the BEEM current are related to the inclusion orientation and local surface step structure. An observation of an anomalously low SBH is discussed, suggesting the existence of a triple- or quadruple-stacking fault inclusion." @default.
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• W2004689282 date "2004-07-01" @default.
• W2004689282 modified "2023-09-27" @default.
• W2004689282 title "Cubic inclusions in 4H-SiC studied with ballistic electron-emission microscopy" @default.
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• W2004689282 doi "https://doi.org/10.1116/1.1705644" @default.
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