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• W2004692770 abstract "In this paper we present photoluminescence decay measurements from n-type, iodine-doped, ZnSe and nominally undoped Zn 0.25 Cd 0.75 Se ZnSe single quantum well structures grown by molecular beam epitaxy. In the temperature range 70–500 K, the iodine-doped material shows evidence of the trapping and re-emission of carriers from three deep acceptor levels at 80, 120, and 350 meV above the valence band. Recombination in the quantum well material is dominated by radiative processes for temperatures < 100 K, whilst at room temperature measurements indicate that the non-radiative processes are considerably worse than in bulk material." @default.
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• W2004692770 date "1996-02-01" @default.
• W2004692770 modified "2023-09-24" @default.
• W2004692770 title "A study of the excess carrier dynamics in ZnSe based structures grown by molecular beam epitaxy" @default.
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• W2004692770 doi "https://doi.org/10.1016/0022-0248(95)00690-7" @default.
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