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- W2004698384 abstract "It is generally accepted that Cr-doped LEC GaAs has a higher resistivity than undoped semiinsulating material grown by the same technique. The principal aim of these measurements is to establish the compensation mechanism in LEC GaAs when both Cr and the native deep donor level EL2 are present. Using EPR mapping, the authors have measured the spatial distribution of the Cr2+ charge state in material which is known to be uniformly doped with Cr. The distribution of (Cr2+) is found to follow that of EL2 in undoped samples. It is concluded that for GaAs heavily doped with Cr the Fermi level is pinned at the Cr2+/Cr3+ acceptor level and that this level lies lower in the forbidden gap than the EL20/EL2+ donor level. The model is shown to explain the electrical characteristics of undoped and Cr-doped LEC GaAs ingots." @default.
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- W2004698384 date "1984-09-14" @default.
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- W2004698384 title "An investigation of the distribution of Cr and EL2 in semiinsulating GaAs grown by the LEC method" @default.
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- W2004698384 doi "https://doi.org/10.1088/0022-3727/17/9/010" @default.
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